36 citations
3 papers
cond-mat.mes-hall2018★ 36 cited
On the Validity and Applicability of Models of Negative Capacitance and Implications for MOS Applications
J. A. Kittl, B. Obradovic, D. Reddy +3
The observation of room temperature sub-60 mV/dec subthreshold slope (SS) in MOSFETs with ferroelectric (FE) layers in the gate stacks or in series with the gate has attracted much…
cond-mat.mtrl-sci2016★ 19 cited
Lower limits of line resistance in nanocrystalline Back End of Line Cu interconnects
Ganesh Hegde, R. Chris Bowen, Mark S. Rodder
The strong non-linear increase in Cu interconnect line resistance with a decrease in linewidth presents a significant obstacle to their continued downscaling. In this letter we use…
cond-mat.mes-hall2013★ 4 cited
A comparison of the carrier density at the surface of quantum wells for different crystal orientations of silicon, gallium arsenide and indium arsenide
Ryan Hatcher, Chris Bowen
We report the carrier densities at the surface of single-crystal quantum wells as a function of material, orientation and well width. We include wells constructed from silicon, gal…