activity
20172020
most citedA Method to Calculate Correlation for Density Functional Theory on a Quantum Processor

7 citations · 12 across the 5 of their papers we have counts for

collaborators

8 papers

cond-mat.mes-hall2020

Comment on "Unveiling the double-well energy landscape in a ferroelectric layer"

J. A. Kittl, M. Houssa, V. V. Afanasiev +1

Analysis of data presented in the paper -- Unveiling the double-well energy landscape in a ferroelectric layer, by M. Hoffmann, et al., Nature 565, 464 (2019) -- suggesting the cla…

cond-mat.mes-hall20201 cited

A critical analysis of models and experimental evidence of negative capacitance stabilization in a ferroelectric by capacitance matching to an adjacent dielectric layer

J. A. Kittl, J. -P. Locquet, M. Houssa +1

We present a thorough analysis of the foundations of models of stabilization of negative capacitance (NC) in a ferroelectric (FE) layer by capacitance matching to a dielectric laye…

quant-ph20197 cited

A Method to Calculate Correlation for Density Functional Theory on a Quantum Processor

Ryan Hatcher, Jorge A. Kittl, Christopher Bowen

An extension of the Variational Quantum Eigensolver (VQE) method is presented where a quantum computer generates an accurate exchange-correlation potential for a Density Functional…

cs.ET2018

High-Accuracy Inference in Neuromorphic Circuits using Hardware-Aware Training

Borna Obradovic, Titash Rakshit, Ryan Hatcher +2

Neuromorphic Multiply-And-Accumulate (MAC) circuits utilizing synaptic weight elements based on SRAM or novel Non-Volatile Memories (NVMs) provide a promising approach for highly e…

cond-mat.mes-hall2018

Modeling Transient Negative Capacitance in Steep-Slope FeFETs

Borna Obradovic, Titash Rakshit, Ryan Hatcher +2

We report on measurements and modeling of FE HfZrO/SiO2 Ferroelectric-Dielectric (FE-DE) FETs which indicate that many of the phenomena attributed to Negative Capacitance can be ex…

cond-mat.mes-hall2018

On the Validity and Applicability of Models of Negative Capacitance and Implications for MOS Applications

J. A. Kittl, B. Obradovic, D. Reddy +3

The observation of room temperature sub-60 mV/dec subthreshold slope (SS) in MOSFETs with ferroelectric (FE) layers in the gate stacks or in series with the gate has attracted much…