76 citations
Counting papers with at most 25 authors, so collaboration author lists do not stand in for the people here.
- Samsung Austin Semiconductor (United States)US3 papers
- Northeastern UniversityUS2 papers
- University of California San DiegoUS2 papers
- AkzoNobel (Netherlands)NL1 paper
- Alexandria UniversityEG1 paper
- Amazon (Germany)DE1 paper
- Ashoka UniversityIN1 paper
- Centre National de la Recherche ScientifiqueFR1 paper
- Institute of Physics and TechnologyKZ1 paper
- Laboratoire Albert FertFR1 paper
- Microsoft (United States)US1 paper
- Moscow Institute of Physics and TechnologyRU1 paper
Showing 2016Show all
2 papers · 1 filter
cond-mat.mes-hall2016★ 45 cited
Disruptive effect of Dzyaloshinskii-Moriya interaction on the MRAM cell performance
J. Sampaio, A. V. Khvalkovskiy, M. Kuteifan +5
In order to increase the thermal stability of a magnetic random access memory (MRAM) cell, materials with high spin-orbit interaction are often introduced in the storage layer. As…
cond-mat.mtrl-sci2016★ 19 cited
Lower limits of line resistance in nanocrystalline Back End of Line Cu interconnects
Ganesh Hegde, R. Chris Bowen, Mark S. Rodder
The strong non-linear increase in Cu interconnect line resistance with a decrease in linewidth presents a significant obstacle to their continued downscaling. In this letter we use…