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Samsung Semiconductor (United States)

United States

16 papers here401 citations across 16
fields
  • cond-mat.mes-hall6
  • cs.CV4
  • cs.PF2
  • cond-mat.mtrl-sci1
  • cs.LG1
  • eess.IV1
  • stat.ML1
ROR 04hr9sz71OpenAlex

affiliations via OpenAlex

output
20132020
most citedSemantic Robustness of Models of Source Code

76 citations

researchers with a paper here

Counting papers with at most 25 authors, so collaboration author lists do not stand in for the people here.

  • Jungwon Lee3 · h 36
  • Mostafa El-Khamy3 · h 31
  • R. Hatcher3 · h 9
  • B. Obradovic2 · h 18
  • Haoyu Ren2 · h 15
  • J. Bhimani2 · h 14
  • J. Kittl2 · h 36
  • M. Rodder2 · h 22
  • N. Mi2 · h 30
  • Zhengyu Yang2 · h 18
  • A. Gijsenij1 · h 18
  • A. Khvalkovskiy1 · h 17
collaborating institutions
  • Samsung Austin Semiconductor (United States)US3 papers
  • Northeastern UniversityUS2 papers
  • University of California San DiegoUS2 papers
  • AkzoNobel (Netherlands)NL1 paper
  • Alexandria UniversityEG1 paper
  • Amazon (Germany)DE1 paper
  • Ashoka UniversityIN1 paper
  • Centre National de la Recherche ScientifiqueFR1 paper
  • Institute of Physics and TechnologyKZ1 paper
  • Laboratoire Albert FertFR1 paper
  • Microsoft (United States)US1 paper
  • Moscow Institute of Physics and TechnologyRU1 paper
Showing 2015Show all

1 paper · 1 filter

cond-mat.mes-hall2015★ 10 cited

General Geometric Fluctuation Modeling for Device Variability Analysis

Bo Fu, Seonghoon Jin, Woosung Choi +2

The authors propose a new modeling approach based on the impedance field method (IFM) to analyze the general geometric variations in device simulations. Compared with the direct mo…

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