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Samsung Semiconductor (United States)

United States

16 papers here401 citations across 16
fields
  • cond-mat.mes-hall6
  • cs.CV4
  • cs.PF2
  • cond-mat.mtrl-sci1
  • cs.LG1
  • eess.IV1
  • stat.ML1
ROR 04hr9sz71OpenAlex

affiliations via OpenAlex

output
20132020
most citedSemantic Robustness of Models of Source Code

76 citations

researchers with a paper here

Counting papers with at most 25 authors, so collaboration author lists do not stand in for the people here.

  • Jungwon Lee3 · h 36
  • Mostafa El-Khamy3 · h 31
  • R. Hatcher3 · h 9
  • B. Obradovic2 · h 18
  • Haoyu Ren2 · h 15
  • J. Bhimani2 · h 14
  • J. Kittl2 · h 36
  • M. Rodder2 · h 22
  • N. Mi2 · h 30
  • Zhengyu Yang2 · h 18
  • A. Gijsenij1 · h 18
  • A. Khvalkovskiy1 · h 17
collaborating institutions
  • Samsung Austin Semiconductor (United States)US3 papers
  • Northeastern UniversityUS2 papers
  • University of California San DiegoUS2 papers
  • AkzoNobel (Netherlands)NL1 paper
  • Alexandria UniversityEG1 paper
  • Amazon (Germany)DE1 paper
  • Ashoka UniversityIN1 paper
  • Centre National de la Recherche ScientifiqueFR1 paper
  • Institute of Physics and TechnologyKZ1 paper
  • Laboratoire Albert FertFR1 paper
  • Microsoft (United States)US1 paper
  • Moscow Institute of Physics and TechnologyRU1 paper
Showing 2013Show all

1 paper · 1 filter

cond-mat.mes-hall2013★ 4 cited

A comparison of the carrier density at the surface of quantum wells for different crystal orientations of silicon, gallium arsenide and indium arsenide

Ryan Hatcher, Chris Bowen

We report the carrier densities at the surface of single-crystal quantum wells as a function of material, orientation and well width. We include wells constructed from silicon, gal…

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