38 citations
- AMO (Germany)DE8 papers
- RWTH Aachen UniversityDE8 papers
- Compound Semiconductor Technologies (United Kingdom)GB2 papers
- Ernst Ruska CentreDE2 papers
- Forschungszentrum JülichDE2 papers
- IMECBE2 papers
- Universidad de GranadaES2 papers
- Blumenthal FoundationUS1 paper
- Carl von Ossietzky Universität OldenburgDE1 paper
- CEA GrenobleFR1 paper
- Centre de recherche public Gabriel-LippmannLU1 paper
- Commissariat à l'Énergie Atomique et aux Énergies AlternativesFR1 paper
7 papers · 1 filter
Contact Resistance Optimization in MoS Field-Effect Transistors through Reverse Sputtering-Induced Structural Modifications
Yuan Fa, Agata Piacentini, Bart Macco +5
Two-dimensional material (2DM)-based field-effect transistors (FETs), such as molybdenum disulfide (MoS)-FETs, have gained significant attention for their potential for ultra…
Dry Transfer Based on PMMA and Thermal Release Tape for Heterogeneous Integration of 2D-TMDC Layers
Amir Ghiami, Hleb Fiadziushkin, Tianyishan Sun +9
A reliable and scalable transfer of 2D-TMDCs (two-dimensional transition metal dichalcogenides) from the growth substrate to a target substrate with high reproducibility and yield…
Volatile MoS Memristors with Lateral Silver Ion Migration for Artificial Neuron Applications
Sofia Cruces, Mohit D. Ganeriwala, Jimin Lee +12
Layered two-dimensional (2D) semiconductors have shown enhanced ion migration capabilities along their van der Waals (vdW) gaps and on their surfaces. This effect can be employed f…
Multiparameter admittance spectroscopy for investigating defects in MoS thin film MOSFETs
Eros Reato, Ardeshir Esteki, Benny Ku +4
A method for assessing the quality of electronic material properties of thin-film metal oxide semiconductor field-effect transistors (MOSFETs) is presented. By investigating sample…
Deposition of highly-crystalline AlScN thin films using synchronized HiPIMS -- from combinatorial screening to piezoelectric devices
Jyotish Patidar, Kerstin Thorwarth, Thorsten Schmitz-Kempen +2
Fueled by the 5G revolution, the demand for advanced radio frequency micro-electromechanical systems (MEMS) based on AlScN is growing rapidly. However, synthesizing high-quality, t…
AlN/Si interface engineering to mitigate RF losses in MOCVD grown GaN-on-Si substrates
Pieter Cardinael, Sachin Yadav, Herwig Hahn +11
Fabrication of low-RF loss GaN-on-Si HEMT stacks is critical to enable competitive front-end-modules for 5G and 6G applications. The main contribution to RF losses is the interface…