49 citations · 107 across the 7 of their papers we have counts for
8 papers
Reduced Variability in Threshold Switches Using Heterostructures of SiO and Vertically Aligned MoS
Jimin Lee, Rana Walied Ahmad, Sofía Cruces +7
Layered two-dimensional (2D) materials provide unique structural features, such as physical gaps between their layers that are only connected through van der Waals (vdW) forces. Th…
Intermediate Resistive State in Wafer-Scale MoS Memristors through Lateral Silver Filament Growth for Artificial Synapse Applications
Yuan Fa, Milan Buttberg, Ke Ran +17
Memristors based on two-dimensional materials (2DMs) have garnered significant attention due to their fast resistive switching (RS) behavior and atomic-level thickness, which enabl…
Threshold Switching in Vertically Aligned MoS/SiO Heterostructures based on Silver Ion Migration
Jimin Lee, Rana Walied Ahmad, Sofía Cruces +7
Threshold switching (TS) is a phenomenon where non-permanent changes in electrical resistance of a two-terminal device can be controlled by modulating the voltage bias. TS based on…
Volatile and Nonvolatile Resistive Switching in Lateral 2D Molybdenum Disulfide-Based Memristive Devices
Sofía Cruces, Mohit D. Ganeriwala, Jimin Lee +14
Developing electronic devices capable of emulating biological functions is essential for advancing brain-inspired computation paradigms such as neuromorphic computing. In recent ye…
Influence of Humidity on the Resistive Switching of Hexagonal Boron Nitride-Based Memristors
Lukas Völkel, Rana Walied Ahmad, Alana Bestaeva +8
Two-dimensional material-based memristors have recently gained attention as components of future neuromorphic computing concepts. However, their surrounding atmosphere can influenc…
Volatile MoS Memristors with Lateral Silver Ion Migration for Artificial Neuron Applications
Sofia Cruces, Mohit D. Ganeriwala, Jimin Lee +12
Layered two-dimensional (2D) semiconductors have shown enhanced ion migration capabilities along their van der Waals (vdW) gaps and on their surfaces. This effect can be employed f…
Non-Volatile Resistive Switching of Polymer Residues in 2D Material Memristors
Dennis Braun, Mohit D. Ganeriwala, Lukas Völkel +11
Two-dimensional (2D) materials are popular candidates for emerging nanoscale devices, including memristors. Resistive switching (RS) in such 2D material memristors has been attribu…
Resistive Switching and Current Conduction Mechanisms in Hexagonal Boron Nitride Threshold Memristors with Nickel Electrodes
Lukas Völkel, Dennis Braun, Melkamu Belete +8
The two-dimensional (2D) insulating material hexagonal boron nitride (h BN) has attracted much attention as the active medium in memristive devices due to its favorable physical pr…