49 citations · 107 across the 7 of their papers we have counts for
5 papers · 1 filter
Reduced Variability in Threshold Switches Using Heterostructures of SiO and Vertically Aligned MoS
Jimin Lee, Rana Walied Ahmad, Sofía Cruces +7
Layered two-dimensional (2D) materials provide unique structural features, such as physical gaps between their layers that are only connected through van der Waals (vdW) forces. Th…
Intermediate Resistive State in Wafer-Scale MoS Memristors through Lateral Silver Filament Growth for Artificial Synapse Applications
Yuan Fa, Milan Buttberg, Ke Ran +17
Memristors based on two-dimensional materials (2DMs) have garnered significant attention due to their fast resistive switching (RS) behavior and atomic-level thickness, which enabl…
Threshold Switching in Vertically Aligned MoS/SiO Heterostructures based on Silver Ion Migration
Jimin Lee, Rana Walied Ahmad, Sofía Cruces +7
Threshold switching (TS) is a phenomenon where non-permanent changes in electrical resistance of a two-terminal device can be controlled by modulating the voltage bias. TS based on…
Volatile and Nonvolatile Resistive Switching in Lateral 2D Molybdenum Disulfide-Based Memristive Devices
Sofía Cruces, Mohit D. Ganeriwala, Jimin Lee +14
Developing electronic devices capable of emulating biological functions is essential for advancing brain-inspired computation paradigms such as neuromorphic computing. In recent ye…
Influence of Humidity on the Resistive Switching of Hexagonal Boron Nitride-Based Memristors
Lukas Völkel, Rana Walied Ahmad, Alana Bestaeva +8
Two-dimensional material-based memristors have recently gained attention as components of future neuromorphic computing concepts. However, their surrounding atmosphere can influenc…