22 citations · 120 across the 11 of their papers we have counts for
11 papers
Intermediate Resistive State in Wafer-Scale MoS Memristors through Lateral Silver Filament Growth for Artificial Synapse Applications
Yuan Fa, Milan Buttberg, Ke Ran +17
Memristors based on two-dimensional materials (2DMs) have garnered significant attention due to their fast resistive switching (RS) behavior and atomic-level thickness, which enabl…
Facile Synthesis and On-Chip Color Tuning of CsPbBr@CsPbBrTFA Nanoplatelets via Ion Engineering
Sana Khan, Saeed Goudarzi, Stephan Schäffer +11
Metal halide perovskites (MHPs) have emerged as attractive optoelectronic materials because of high fluorescence quantum yield, broad color tunability, and excellent color purity.…
Threshold Switching in Vertically Aligned MoS/SiO Heterostructures based on Silver Ion Migration
Jimin Lee, Rana Walied Ahmad, Sofía Cruces +7
Threshold switching (TS) is a phenomenon where non-permanent changes in electrical resistance of a two-terminal device can be controlled by modulating the voltage bias. TS based on…
Unraveling the dynamics of conductive filaments in MoS based memristors by operando transmission electron microscopy
Ke Ran, Janghyun Jo, Sofía Cruces +4
Advanced operando transmission electron microscopy (TEM) techniques enable the observation of nanoscale phenomena in electrical devices during operation. They can be used to study…
Volatile and Nonvolatile Resistive Switching in Lateral 2D Molybdenum Disulfide-Based Memristive Devices
Sofía Cruces, Mohit D. Ganeriwala, Jimin Lee +14
Developing electronic devices capable of emulating biological functions is essential for advancing brain-inspired computation paradigms such as neuromorphic computing. In recent ye…
Influence of Humidity on the Resistive Switching of Hexagonal Boron Nitride-Based Memristors
Lukas Völkel, Rana Walied Ahmad, Alana Bestaeva +8
Two-dimensional material-based memristors have recently gained attention as components of future neuromorphic computing concepts. However, their surrounding atmosphere can influenc…
Contact Resistance Optimization in MoS Field-Effect Transistors through Reverse Sputtering-Induced Structural Modifications
Yuan Fa, Agata Piacentini, Bart Macco +5
Two-dimensional material (2DM)-based field-effect transistors (FETs), such as molybdenum disulfide (MoS)-FETs, have gained significant attention for their potential for ultra…
Spectroscopic ellipsometry of CsPbCl perovskite thin films
Sana Khan, Piotr J. Cegielski, Manuel Runkel +3
Designing optoelectronic devices based on cesium lead chloride (CsPbCl) perovskites requires accurate values of their optical constants. Unfortunately, experimental data for…
Dry Transfer Based on PMMA and Thermal Release Tape for Heterogeneous Integration of 2D-TMDC Layers
Amir Ghiami, Hleb Fiadziushkin, Tianyishan Sun +9
A reliable and scalable transfer of 2D-TMDCs (two-dimensional transition metal dichalcogenides) from the growth substrate to a target substrate with high reproducibility and yield…
Volatile MoS Memristors with Lateral Silver Ion Migration for Artificial Neuron Applications
Sofia Cruces, Mohit D. Ganeriwala, Jimin Lee +12
Layered two-dimensional (2D) semiconductors have shown enhanced ion migration capabilities along their van der Waals (vdW) gaps and on their surfaces. This effect can be employed f…
Button Shear Testing for Adhesion Measurements of 2D Materials
Josef Schätz, Navin Nayi, Jonas Weber +13
Two-dimensional (2D) materials are considered for numerous applications in microelectronics, although several challenges remain when integrating them into functional devices. Weak…