38 citations
- AMO (Germany)DE8 papers
- RWTH Aachen UniversityDE8 papers
- Compound Semiconductor Technologies (United Kingdom)GB2 papers
- Ernst Ruska CentreDE2 papers
- Forschungszentrum JülichDE2 papers
- IMECBE2 papers
- Universidad de GranadaES2 papers
- Blumenthal FoundationUS1 paper
- Carl von Ossietzky Universität OldenburgDE1 paper
- CEA GrenobleFR1 paper
- Centre de recherche public Gabriel-LippmannLU1 paper
- Commissariat à l'Énergie Atomique et aux Énergies AlternativesFR1 paper
Showing 2024 · cond-mat.mtrl-sciShow all
3 papers · 2 filters
cond-mat.mtrl-sci2024★ 21 cited
Contact Resistance Optimization in MoS Field-Effect Transistors through Reverse Sputtering-Induced Structural Modifications
Yuan Fa, Agata Piacentini, Bart Macco +5
Two-dimensional material (2DM)-based field-effect transistors (FETs), such as molybdenum disulfide (MoS)-FETs, have gained significant attention for their potential for ultra…
cond-mat.mtrl-sci2024
Deposition of highly-crystalline AlScN thin films using synchronized HiPIMS -- from combinatorial screening to piezoelectric devices
Jyotish Patidar, Kerstin Thorwarth, Thorsten Schmitz-Kempen +2
Fueled by the 5G revolution, the demand for advanced radio frequency micro-electromechanical systems (MEMS) based on AlScN is growing rapidly. However, synthesizing high-quality, t…
cond-mat.mtrl-sci2024★ 4 cited
Excitons in epitaxially grown WS2 on Graphene: a nanometer-resolved EELS and DFT study
Max Bergmann, Jürgen Belz, Oliver Maßmeyer +12
In this study, we investigate excitonic properties of epitaxially grown WS2, which is of particular interest for various applications due to its potential for upscaling to wafer si…