1.2k citations · 3.6k across the 73 of their papers we have counts for
44 papers · 1 filter
Quasiparticle excitations in a one-dimensional interacting topological insulator: Application for dopant-based quantum simulation
David Mikhail, Benoit Voisin, Dominique Didier St Medar +3
We study the effects of electron-electron interactions on the charge excitation spectrum of the spinful Su-Schrieffer-Heeger (SSH) model, a prototype of a 1D bulk obstructed topolo…
Valley population of donor states in highly strained silicon
B. Voisin, K. S. H. Ng, J. Salfi +13
Strain is extensively used to controllably tailor the electronic properties of materials. In the context of indirect band-gap semiconductors such as silicon, strain lifts the valle…
Novel characterisation of dopant-based qubits
B. Voisin, J. Salfi, R. Rahman +1
Silicon is a leading qubit platform thanks to the exceptional coherence times that can be achieved and to the available commercial manufacturing platform for integration. Building…
Flopping-mode electric dipole spin resonance in phosphorus donor qubits in silicon
F. N. Krauth, S. K. Gorman, Y. He +9
Single spin qubits based on phosphorus donors in silicon are a promising candidate for a large-scale quantum computer. Despite long coherence times, achieving uniform magnetic cont…
Spin-photon coupling for atomic qubit devices in silicon
Edyta N. Osika, Sacha Kocsis, Yu-Ling Hsueh +6
Electrically addressing spin systems is predicted to be a key component in developing scalable semiconductor-based quantum processing architectures, to enable fast spin qubit manip…
Scanned single-electron probe inside a silicon electronic device
Kevin S. H. Ng, Benoit Voisin, Brett C. Johnson +3
Solid-state devices can be fabricated at the atomic scale, with applications ranging from classical logic to current standards and quantum technologies. While it is very desirable…
Optimal operation points for ultrafast, highly coherent Ge hole spin-orbit qubits
Zhanning Wang, Elizabeth Marcellina, A. R. Hamilton +4
Strong spin-orbit interactions make hole quantum dots central to the quest for electrical spin qubit manipulation enabling fast, low-power, scalable quantum computation. Yet it is…
Hole-Spin-Echo Envelope Modulations
Pericles Philippopoulos, Stefano Chesi, Joe Salfi +2
Hole spins in semiconductor quantum dots or bound to acceptor impurities show promise as potential qubits, partly because of their weak and anisotropic hyperfine couplings to proxi…
Gigahertz Single-Electron Pumping Mediated by Parasitic States
A. Rossi, J. Klochan, J. Timoshenko +6
In quantum metrology, semiconductor single-electron pumps are used to generate accurate electric currents with the ultimate goal of implementing the emerging quantum standard of th…
Valley filtering and spatial maps of coupling between silicon donors and quantum dots
J. Salfi, B. Voisin, A. Tankasala +6
Exchange coupling is a key ingredient for spin-based quantum technologies since it can be used to entangle spin qubits and create logical spin qubits. However, the influence of the…
Two-electron states of a group V donor in silicon from atomistic full configuration interaction
Archana Tankasala, Joseph Salfi, Juanita Bocquel +7
Two-electron states bound to donors in silicon are important for both two qubit gates and spin readout. We present a full configuration interaction technique in the atomistic tight…
Spin-orbit dynamics of single acceptor atoms in silicon
J. van der Heijden, T. Kobayashi, M. G. House +5
Two-level quantum systems with strong spin-orbit coupling allow for all-electrical qubit control and long-distance qubit coupling via microwave and phonon cavities, making them of…
Probing the Quantum States of a Single Atom Transistor at Microwave Frequencies
Giuseppe Carlo Tettamanzi, Samuel James Hile, Matthew Gregory House +3
The ability to apply GHz frequencies to control the quantum state of a single atom is an essential requirement for the fast gate pulsing needed for qubit control in donor based…
Linear and planar molecules formed by coupled P donors in silicon
M. V. Klymenko, S. Rogge, F. Remacle
Using the effective mass theory and the multi-valley envelope function representation, we have developed a theoretical framework for computing the single-electron electronic struct…
Dynamics of a single-atom electron pump
J. van der Heijden, G. C. Tettamanzi, S. Rogge
Single-electron pumps based on isolated impurity atoms have recently been experimentally demonstrated. In these devices the Coulomb potential of an atom creates a localised electro…
Quantum Computing with Acceptor Spins in Silicon
Joe Salfi, Mengyang Tong, Sven Rogge +1
The states of a boron acceptor near a Si/SiO2 interface, which bind two low-energy Kramers pairs, have exceptional properties for encoding quantum information and, with the aid of…
Resonant tunneling spectroscopy of valley eigenstates on a hybrid double quantum dot
T. Kobayashi, J. van der Heijden, M. G. House +6
We report electronic transport measurements through a silicon hybrid double quantum dot consisting of a donor and a quantum dot. Transport spectra show resonant tunneling peaks inv…
Superadiabatic quantum state transfer in spin chains
Ricardo Agundez, Charles D. Hill, Lloyd C. L. Hollenberg +2
In this letter we propose a superadiabatic protocol where quantum state transfer can be achieved with arbitrarily high accuracy and minimal control across long spin chains with an…
Bulk and sub-surface donor bound excitons in silicon under electric fields
Rajib Rahman, Jan Verduijn, Yu Wang +4
The electronic structure of the three-particle donor bound exciton (DX) in silicon is computed using a large-scale atomic orbital tight-binding method within the Hartree approx…
Radio frequency reflectometry and charge sensing of a precision placed donor in silicon
Samuel J. Hile, Matthew G. House, Eldad Peretz +5
We compare charge transitions on a deterministic single P donor in silicon using radio frequency reflectometry measurements with a tunnel coupled reservoir and DC charge sensing us…
Charge-insensitive single-atom spin-orbit qubit in silicon
J. Salfi, J. A. Mol, Dimitrie Culcer +1
High fidelity entanglement of an on-chip array of spin qubits poses many challenges. Spin-orbit coupling (SOC) can ease some of these challenges by enabling long-ranged entanglemen…
Quantum Simulation of the Hubbard Model with Dopant Atoms in Silicon
J. Salfi, J. A. Mol, R. Rahman +4
In quantum simulation, many-body phenomena are probed in controllable quantum systems. Recently, simulation of Bose-Hubbard Hamiltonians using cold atoms revealed previously hidden…
A planar Al-Si Schottky Barrier MOSFET operated at cryogenic temperatures
Wendy E. Purches, Alessandro Rossi, Ruichen Zhao +5
Schottky Barrier (SB)-MOSFET technology offers intriguing possibilities for cryogenic nano-scale devices, such as Si quantum devices and superconducting devices. We present experim…
Strain and Electric Field Control of Hyperfine Interactions for Donor Spin Qubits in Silicon
Muhammad Usman, Charles D. Hill, Rajib Rahman +4
Control of hyperfine interactions is a fundamental requirement for quantum computing architecture schemes based on shallow donors in silicon. However, at present, there is lacking…