283 citations · 2.3k across the 60 of their papers we have counts for
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An atomic scale study of Si-doped AlAs by cross-sectional scanning tunneling microscopy and density functional theory
D. Tjeertes, A. Vela, T. J. F. Verstijnen +6
Silicon (Si) donors in GaAs have been the topic of extensive studies since Si is the most common and well understood n-type dopant in III-V semiconductor devices and substrates. Th…
Disordered Si:P nanostructures as switches and wires for nanodevices
Amintor Dusko, Belita Koiller, Caio Lewenkopf
Atomically precise placement of dopants in Si permits creating substitutional P nanowires by design. High-resolution images show that these wires are few atoms wide with some posit…
Lifting of Spin Blockade by Charged Impurities in Si-MOS Double Quantum Dot Devices
Evelyn King, Joshua S. Schoenfield, M. J. Calderón +6
One obstacle that has slowed the development of electrically gated metal-oxide-semiconductor (MOS) singlet-triplet qubits is the frequent lack of observed spin blockade, even in sa…
Theory of Hole-Spin Qubits in Strained Germanium Quantum Dots
L. A. Terrazos, E. Marcellina, Zhanning Wang +8
We theoretically investigate the properties of holes in a SiGe/Ge/ SiGe quantum well in a perpendicular magnetic field that make them advantageous as qu…
Donors in Ge as Qubits: Establishing Physical Attributes
A. Baena, A. L. Saraiva, Marcos G. Menezes +1
Quantum electronic devices at the single impurity level demand an understanding of the physical attributes of dopants at an unprecedented accuracy. Germanium-based technologies hav…
Anderson Localization of Electrons in Silicon Donor Chains
Amintor Dusko, Andre Saraiva, Belita Koiller
We construct a model to study the localization properties of nanowires of dopants in silicon (Si) fabricated by precise ionic implantation or STM lithography. Experiments have show…
Donor Wavefunctions in Si Gauged by STM Images
A. L. Saraiva, J. Salfi, J. Bocquel +5
The triumph of effective mass theory in describing the energy spectrum of dopants does not guarantee that the model wavefunctions will withstand an experimental test. Such wavefunc…
Theory of one and two donors in Silicon
A. L. Saraiva, A. Baena, M. J. Calderón +1
We provide here a roadmap for modeling silicon nano-devices with one or two group V donors (D). We discuss systems containing one or two electrons, that is, D^0, D^-, D_2^+ and D_2…
An Exchange-Coupled Donor Molecule in Silicon
M. Fernando Gonzalez-Zalba, André Saraiva, Dominik Heiss +3
Donors in silicon, conceptually described as hydrogen atom analogues in a semiconductor environment, have become a key ingredient of many "More-than-Moore" proposals such as quantu…
Splitting Valleys in Si/SiO: Identification and Control of Interface States
Amintor Dusko, A. L. Saraiva, Belita Koiller
Interface states in a silicon/barrier junction break the silicon valley degeneracy near the interface, a desirable feature for some Si quantum electronics applications. Within a mi…
Quantum and classical correlations and Werner states in finite spin linear arrays
P. R. Wells, C. M. Chaves, J. A. e. Castro +1
Pairwise quantum correlations in the ground state of a N-spins antiferromagnetic chain described by the Heisenberg model with nearest neighbor exchange coupling are investigated. B…
Genetic Design of Enhanced Valley Splitting towards a Spin Qubit in Silicon
Lijun Zhang, Jun-Wei Luo, A. L. Saraiva +2
Electronic spins in Silicon (Si) are rising contenders for qubits -- the logical unit of quantum computation-- owing to its outstanding spin coherence properties and compatibility…
Impact of the valley degree of freedom on the control of donor electrons near a Si/SiO_2 interface
A. Baena, A. L. Saraiva, Belita Koiller +1
We analyze the valley composition of one electron bound to a shallow donor close to a Si/barrier interface as a function of an applied electric field. A full six-valley effective m…
Quantum and classical correlations in antiferromagnetic chains and the realization of Werner states with spins
P. R. Wells, Belita Koiller
We investigate pairwise correlation properties of the ground state (GS) of finite antiferromagnetic (AFM) spin chains described by the Heisenberg model. The exchange coupling is re…
Valley-based noise-resistant quantum computation using Si quantum dots
Dimitrie Culcer, A. L. Saraiva, Belita Koiller +2
We devise a platform for noise-resistant quantum computing using the valley degree of freedom of Si quantum dots. The qubit is encoded in two polarized (1,1) spin-triplet states wi…
Extended interface states enhance valley splitting in Si/SiO2
A. L. Saraiva, Belita Koiller, Mark Friesen
Interface disorder and its effect on the valley degeneracy of the conduction band edge remains among the greatest theoretical challenges for understanding the operation of spin qub…
Hyperfine interactions in silicon quantum dots
Lucy V. C. Assali, Helena M. Petrilli, Rodrigo B. Capaz +3
We present an all-electron calculation of the hyperfine parameters for conduction electrons in Si, showing that: (i) all parameters scale linearly with the spin density at a $^{29}…
Intervalley coupling for interface-bound electrons in silicon: An effective mass study
A. L. Saraiva, M. J. Calderón, Rodrigo B. Capaz +3
Orbital degeneracy of the electronic conduction band edge in silicon is a potential roadblock to the storage and manipulation of quantum information involving the electronic spin d…
Heterointerface effects on the charging energy of shallow D- ground state in silicon: the role of dielectric mismatch
M. J. Calderon, J. Verduijn, G. P. Lansbergen +3
Donor states in Si nanodevices can be strongly modified by nearby insulating barriers and metallic gates. We report here experimental results indicating a strong reduction in the c…
Quantum computation with doped silicon cavities
M. Abanto, L. Davidovich, Belita Koiller +1
We propose a quantum computer architecture involving substitutional donors in photonic-crystal silicon cavities and the optical initialization, manipulation, and detection processe…
Quantum control and manipulation of donor electrons in Si-based quantum computing
M. J. Calderon, A. Saraiva, B. Koiller +1
Doped Si is a promising candidate for quantum computing due to its scalability properties, long spin coherence times, and the astonishing progress on Si technology and miniaturizat…
Valley interference effects on a donor electron close to a Si/SiO2 interface
M. J. Calderon, Belita Koiller, S. Das Sarma
We analyze the effects of valley interference on the quantum control and manipulation of an electron bound to a donor close to a Si/SiO2 interface as a function of the valley-orbit…
External field control of donor electron exchange at the Si/SiO2 interface
M. J. Calderon, Belita Koiller, S. Das Sarma
We analyze several important issues for the single- and two-qubit operations in Si quantum computer architectures involving P donors close to a SiO2 interface. For a single donor,…
Single electron spin and its coherence in Si quantum computer architecture
M. J. Calderon, Belita Koiller, S. Das Sarma
The possibility of performing single spin measurements in Si-based quantum computers through electric field control of electrons bound to double donors near a barrier interface is…