975 citations · 10.3k across the 98 of their papers we have counts for
12 papers · 1 filter
Electrical control of the -tensor of a single hole in a silicon MOS quantum dot
S. D. Liles, F. Martins, D. S. Miserev +11
Single holes confined in semiconductor quantum dots are a promising platform for spin qubit technology, due to the electrical tunability of the -factor of holes. However, the un…
Enhancement of Proximity Induced Superconductivity in a Planar Ge Hole Gas
Kushagra Aggarwal, Andrea Hofmann, Daniel Jirovec +9
Hole gases in planar germanium can have high mobilities in combination with strong spin-orbit interaction and electrically tunable g-factors, and are therefore emerging as a promis…
CMOS-based cryogenic control of silicon quantum circuits
Xiao Xue, Bishnu Patra, Jeroen P. G. van Dijk +21
The most promising quantum algorithms require quantum processors hosting millions of quantum bits when targeting practical applications. A major challenge towards large-scale quant…
A four-qubit germanium quantum processor
N. W. Hendrickx, W. I. L. Lawrie, M. Russ +6
The prospect of building quantum circuits using advanced semiconductor manufacturing positions quantum dots as an attractive platform for quantum information processing. Extensive…
A two-dimensional array of single-hole quantum dots
F. van Riggelen, N. W. Hendrickx, W. I. L. Lawrie +4
Quantum dots fabricated using techniques and materials that are compatible with semiconductor manufacturing are promising for quantum information processing. While great progress h…
High-fidelity two-qubit gates in silicon above one Kelvin
L. Petit, M. Russ, H. G. J. Eenink +4
Spin qubits in quantum dots define an attractive platform for scalable quantum information because of their compatibility with semiconductor manufacturing, their long coherence tim…
Low percolation density and charge noise with holes in germanium
M. Lodari, N. W. Hendrickx, W. I. L. Lawrie +5
We engineer planar Ge/SiGe heterostructures for low disorder and quiet hole quantum dot operation by positioning the strained Ge channel 55~nm below the semiconductor/dielectric in…
Spin relaxation benchmarks and individual qubit addressability for holes in quantum dots
W. I. L. Lawrie, N. W. Hendrickx, F. van Riggelen +5
We investigate hole spin relaxation in the single- and multi-hole regime in a 2x2 germanium quantum dot array. We use radiofrequency (rf) charge sensing and observe Pauli Spin-Bloc…
Effect of quantum Hall edge strips on valley splitting in silicon quantum wells
Brian Paquelet Wuetz, Merritt P. Losert, Alberto Tosato +10
We determine the energy splitting of the conduction-band valleys in two-dimensional electrons confined to low-disorder Si quantum wells. We probe the valley splitting dependence on…
On-chip Integration of Si/SiGe-based Quantum Dots and Switched-capacitor Circuits
Y. Xu, F. K. Unseld, A. Corna +9
Solid-state qubits integrated on semiconductor substrates currently require at least one wire from every qubit to the control electronics, leading to a so-called wiring bottleneck…
The germanium quantum information route
Giordano Scappucci, Christoph Kloeffel, Floris A. Zwanenburg +6
In the worldwide endeavor for disruptive quantum technologies, germanium is emerging as a versatile material to realize devices capable of encoding, processing, or transmitting qua…
Exchange coupling in a linear chain of three quantum-dot spin qubits in silicon
Kok Wai Chan, Harshad Sahasrabudhe, Wister Huang +12
Quantum gates between spin qubits can be implemented leveraging the natural Heisenberg exchange interaction between two electrons in contact with each other. This interaction is co…