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20092026
most citedAn addressable quantum dot qubit with fault-tolerant control fidelity

975 citations · 10.3k across the 98 of their papers we have counts for

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Showing 2017Show all

6 papers · 1 filter

quant-ph2017★ 20 cited

Quantum error correction in crossbar architectures

Jonas Helsen, Mark Steudtner, Menno Veldhorst +1

A central challenge for the scaling of quantum computing systems is the need to control all qubits in the system without a large overhead. A solution for this problem in classical…

cond-mat.mes-hall2017★ 274 cited

A Crossbar Network for Silicon Quantum Dot Qubits

R. Li, L. Petit, D. P. Franke +10

The spin states of single electrons in gate-defined quantum dots satisfy crucial requirements for a practical quantum computer. These include extremely long coherence times, high-f…

cond-mat.mes-hall2017★ 59 cited

Electron g-factor of valley states in realistic silicon quantum dots

Rusko Ruskov, Menno Veldhorst, Andrew S. Dzurak +1

We theoretically model the spin-orbit interaction in silicon quantum dot devices, relevant for quantum computation and spintronics. Our model is based on a modified effective mass…

cond-mat.mes-hall2017★ 747 cited

A programmable two-qubit quantum processor in silicon

T. F. Watson, S. G. J. Philips, E. Kawakami +9

With qubit measurement and control fidelities above the threshold of fault-tolerance, much attention is moving towards the daunting task of scaling up the number of physical qubits…

quant-ph2017★ 93 cited

Integrated silicon qubit platform with single-spin addressability, exchange control and robust single-shot singlet-triplet readout

M. A. Fogarty, K. W. Chan, B. Hensen +10

Silicon quantum dot spin qubits provide a promising platform for large-scale quantum computation because of their compatibility with conventional CMOS manufacturing and the long co…

quant-ph2017★ 60 cited

Interface induced spin-orbit interaction in silicon quantum dots and prospects for scalability

Rifat Ferdous, Kok W. Chan, Menno Veldhorst +6

We identify the presence of monoatomic steps at the Si/SiGe or Si/SiO interface as a dominant source of variations in the dephasing time of Si quantum dot (QD) spin qubits. Fir…