975 citations · 10.3k across the 98 of their papers we have counts for
8 papers · 1 filter
Electrical control of uniformity in quantum dot devices
Marcel Meyer, Corentin Déprez, Timo R. van Abswoude +9
Highly uniform quantum systems are essential for the practical implementation of scalable quantum processors. While quantum dot spin qubits based on semiconductor technology are a…
Shared control of a 16 semiconductor quantum dot crossbar array
Francesco Borsoi, Nico W. Hendrickx, Valentin John +6
The efficient control of a large number of qubits is one of most challenging aspects for practical quantum computing. Current approaches in solid-state quantum technology are based…
Probing resonating valence bonds on a programmable germanium quantum simulator
Chien-An Wang, Corentin Déprez, Hanifa Tidjani +5
Simulations using highly tunable quantum systems may enable investigations of condensed matter systems beyond the capabilities of classical computers. Quantum dots and donors in se…
Modelling of planar germanium hole qubits in electric and magnetic fields
Chien-An Wang, Ercan Ekmel, Mark Gyure +3
Hole-based spin qubits in strained planar germanium quantum wells have received considerable attention due to their favourable properties and remarkable experimental progress. The…
Hard superconducting gap in germanium
Alberto Tosato, Vukan Levajac, Ji-Yin Wang +9
The co-integration of spin, superconducting, and topological systems is emerging as an exciting pathway for scalable and high-fidelity quantum information technology. High-mobility…
Universal control of a six-qubit quantum processor in silicon
Stephan G. J. Philips, Mateusz T. Mądzik, Sergey V. Amitonov +12
Future quantum computers capable of solving relevant problems will require a large number of qubits that can be operated reliably. However, the requirements of having a large qubit…
A quantum dot crossbar with sublinear scaling of interconnects at cryogenic temperature
P. L. Bavdaz, H. G. J. Eenink, J. van Staveren +6
We demonstrate a 3636 gate electrode crossbar that supports 648 narrow-channel field effect transistors (FET) for gate-defined quantum dots, with a quadratic increase in qu…
A high-mobility hole bilayer in a germanium double quantum well
A. Tosato, B. M. Ferrari, A. Sammak +4
We design, fabricate, and study a hole bilayer in a strained germanium double quantum well. Magnetotransport characterisation of double quantum well field-effect transistors as a f…