Undoped Electron-Hole Bilayers in a GaAs/AlGaAs Double Quantum Well

Abstract

We present the fabrication details of completely undoped electron-hole bilayer devices in a GaAs/AlGaAs double quantum well heterostructure with a 30 nm barrier. These devices have independently tunable densities of the two-dimensional electron gas and two-dimensional hole gas. We report four-terminal transport measurements of the independently contacted electron and hole layers with balanced densities from $1.2\times 10^{11}$cm${}^{-2}$ down to $4\times 10^{10}$ cm${}^{-2}$ at $T=300mK$. The mobilities can exceed $1\times 10^6$ cm${}^2$ V${}^{-1}$ s${}^{-1}$ for electrons and $4\times 10^5$ cm${}^2$ V${}^{-1}$ s${}^{-1}$ for holes.

3 pages, 3 figures

References in corpus (5)

• Bose-Einstein Condensation of Excitons in Bilayer Electron Systems
• Spin Susceptibility of an Ultra-Low Density Two Dimensional Electron System
• Resistivity of dilute 2D electrons in an undoped GaAs heterostructure
• Interaction Corrections to Two-Dimensional Hole Transport in Large $r_s$ Limit
• Closely spaced and separately contacted 2d electron and 2d hole gases by in situ focussed ion implantation

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