Closely spaced and separately contacted 2d electron and 2d hole gases by in situ focussed ion implantation
arXiv:cond-mat/0103589 · doi:10.1063/1.1463698
Abstract
Separately contacted double layers of a 2d electron - 2d hole gases have been prepared in GaAs separated by thin AlGaAs barriers with thicknesses down to 15 nm. The molecular-beam-epitaxial growth was interrupted just before the barrier in order to use in situ focussed-ion-beam implantation to pattern contacts which extend underneath the barrier. The two charge gases form upon biasing the p- and n-type contacts underneath and above the barrier in forward direction and show independent transistor-like behavior.
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