167 citations · 312 across the 6 of their papers we have counts for
6 papers
Single ion implantation for single donor devices using Geiger mode detectors
E. Bielejec, J. A. Seamons, M. S. Carroll
Electronic devices that are designed to use the properties of single atoms such as donors or defects have become a reality with recent demonstrations of donor spectroscopy, single…
Density imbalance effect on the Coulomb drag upturn in an electron-hole bialyer
Christian P. Morath, John A. Seamons, John L. Reno +1
A low-temperature upturn of the Coulomb drag resistivity measured in an undoped electron-hole bilayer (uEHBL) device, possibly manifesting from exciton formation or condensation, w…
Coulomb Drag in the Exciton Regime in Electron-Hole Bilayers
J. A. Seamons, C. P. Morath, J. L. Reno +1
We report electrical transport measurements on GaAs/AlGaAs based electron-hole bilayers. These systems are expected to make a transition from a pair of weakly coupled two-dimension…
Layer interdependence of transport in an undoped electron-hole bilayer
C. P. Morath, J. A. Seamons, J. L. Reno +1
The layer interdependence of transport in an undoped electron-hole bilayer (uEHBL) device was studied as a function of carrier density, interlayer electric field, and temperature.…
Undoped Electron-Hole Bilayers in a GaAs/AlGaAs Double Quantum Well
J. A. Seamons, D. R. Tibbetts, J. L. Reno +1
We present the fabrication details of completely undoped electron-hole bilayer devices in a GaAs/AlGaAs double quantum well heterostructure with a 30 nm barrier. These devices have…
Tunneling and nonlinear transport in a vertically coupled GaAs/AlGaAs double quantum wire system
E. Bielejec, J. A. Seamons, J. L. Reno +1
We report low-dimensional tunneling in an independently contacted vertically coupled quantum wire system. This nanostructure is fabricated in a high quality GaAs/AlGaAs parallel do…