activity
20042008
most citedCoulomb Drag in the Exciton Regime in Electron-Hole Bilayers

167 citations · 270 across the 4 of their papers we have counts for

collaborators

5 papers

cond-mat.mes-hall200830 cited

Density imbalance effect on the Coulomb drag upturn in an electron-hole bialyer

Christian P. Morath, John A. Seamons, John L. Reno +1

A low-temperature upturn of the Coulomb drag resistivity measured in an undoped electron-hole bilayer (uEHBL) device, possibly manifesting from exciton formation or condensation, w…

cond-mat.mes-hall2008167 cited

Coulomb Drag in the Exciton Regime in Electron-Hole Bilayers

J. A. Seamons, C. P. Morath, J. L. Reno +1

We report electrical transport measurements on GaAs/AlGaAs based electron-hole bilayers. These systems are expected to make a transition from a pair of weakly coupled two-dimension…

cond-mat.mes-hall200818 cited

Layer interdependence of transport in an undoped electron-hole bilayer

C. P. Morath, J. A. Seamons, J. L. Reno +1

The layer interdependence of transport in an undoped electron-hole bilayer (uEHBL) device was studied as a function of carrier density, interlayer electric field, and temperature.…

cond-mat.mes-hall200655 cited

Undoped Electron-Hole Bilayers in a GaAs/AlGaAs Double Quantum Well

J. A. Seamons, D. R. Tibbetts, J. L. Reno +1

We present the fabrication details of completely undoped electron-hole bilayer devices in a GaAs/AlGaAs double quantum well heterostructure with a 30 nm barrier. These devices have…

cond-mat.mes-hall2004

Tunneling and nonlinear transport in a vertically coupled GaAs/AlGaAs double quantum wire system

E. Bielejec, J. A. Seamons, J. L. Reno +1

We report low-dimensional tunneling in an independently contacted vertically coupled quantum wire system. This nanostructure is fabricated in a high quality GaAs/AlGaAs parallel do…