Electrical spin injection into p-doped quantum dots through a tunnel barrier
arXiv:cond-mat/0610424 · doi:10.1063/1.2709889
Abstract
We have demonstrated by electroluminescence the injection of spin polarized electrons through Co/Al2O3/GaAs tunnel barrier into p-doped InAs/GaAs quantum dots embedded in a PIN GaAs light emitting diode. The spin relaxation processes in the p-doped quantum dots are characterized independently by optical measurements (time and polarization resolved photoluminescence). The measured electroluminescence circular polarization is about 15 % at low temperature in a 2T magnetic field, leading to an estimation of the electrical spin injection yield of 35%. Moreover, this electroluminescence circular polarization is stable up to 70 K.
6 pages, 4 figures
References in corpus (8)
- Basic obstacle for electrical spin-injection from a ferromagnetic metal into a diffusive semiconductor
- Theory of electrical spin injection: Tunnel contacts as a solution of the conductivity mismatch problem
- Analysis of the Transport Process Providing Spin Injection through an Fe/AlGaAs Schottky Barrier
- Low-temperature spin relaxation in n-type GaAs
- Electrical Spin Injection in a Ferromagnetic / Tunnel Barrier/ Semiconductor Heterostructure
- Spin-polarized light emitting diode using metal/insulator/semiconductor structures
- Electrical Spin Pumping of Quantum Dots at Room Temperature
- Efficient electron spin detection with positively charged quantum dots
Cited by in corpus (7)
- Nuclear spin physics in quantum dots: an optical investigation
- Large and robust electrical spin injection into GaAs at zero magnetic field using an ultrathin CoFeB/MgO injector
- Electrical spin injection into InGaAs/GaAs quantum wells: a comparison between MgO tunnel barriers grown by sputtering and molecular beam epitaxy methods
- Spin diffusion in Si/SiGe quantum wells: spin relaxation in the absence of D'yakonov-Perel' relaxation mechanism
- Electrical Detection of Light Helicity using a Quantum Dots based Hybrid Device at Zero Magnetic Field
- Determination of spin polarization in InAs/GaAs self-assembled quantum dots
- Optimizing spin polarization in quantum dot vertical-gain structures through pump wavelength selection