46 citations · 99 across the 4 of their papers we have counts for
4 papers
940-nm VCSELs grown by molecular beam epitaxy on Ge(001)
Karim Ben Saddik, Alexandre Arnoult, Pierre Gadras +5
Vertical-cavity surface-emitting laser (VCSEL) structures emitting near 940 nm were grown by solid source molecular beam epitaxy (MBE) on Ge(001) substrates. The VCSEL MBE-growth w…
Monitoring MBE substrate deoxidation via RHEED image-sequence analysis by deep learning
Abdourahman Khaireh-Walieh, Alexandre Arnoult, Sébastien Plissard +1
Reflection high-energy electron diffraction (RHEED) is a powerful tool in molecular beam epitaxy (MBE), but RHEED images are often difficult to interpret, requiring experienced ope…
Investigation of the anisotropic electron g factor as a probe of the electronic structure of GaBiAs/GaAs epilayers
Christopher A. Broderick, Simone Mazzucato, Hélène Carrère +9
The electron Landé g factor () is investigated both experimentally and theoretically in a series of GaBiAs/GaAs strained epitaxial layers, for bismuth composit…
Electrical spin injection into p-doped quantum dots through a tunnel barrier
L. Lombez, P. Renucci, P. Gallo +14
We have demonstrated by electroluminescence the injection of spin polarized electrons through Co/Al2O3/GaAs tunnel barrier into p-doped InAs/GaAs quantum dots embedded in a PIN GaA…