A. Arnoult

activity

20062026

most citedElectrical spin injection into p-doped quantum dots through a tunnel barrier

46 citations · 99 across the 4 of their papers we have counts for

collaborators

Showing cond-mat.mtrl-sciShow all

2 papers · 1 filter

cond-mat.mtrl-sci2026

940-nm VCSELs grown by molecular beam epitaxy on Ge(001)

Karim Ben Saddik, Alexandre Arnoult, Pierre Gadras +5

Vertical-cavity surface-emitting laser (VCSEL) structures emitting near 940 nm were grown by solid source molecular beam epitaxy (MBE) on Ge(001) substrates. The VCSEL MBE-growth w…

cond-mat.mtrl-sci2014★ 33 cited

Investigation of the anisotropic electron g factor as a probe of the electronic structure of GaBi $_{x}$ As $_{1 - x}$ /GaAs epilayers

Christopher A. Broderick, Simone Mazzucato, Hélène Carrère +9

The electron Landé g factor ( $g^{*}$ ) is investigated both experimentally and theoretically in a series of GaBi $_{x}$ As $_{1 - x}$ /GaAs strained epitaxial layers, for bismuth composit…

940-nm VCSELs grown by molecular beam epitaxy on Ge(001)

Investigation of the anisotropic electron g factor as a probe of the electronic structure of GaBix​As1−x​/GaAs epilayers

Investigation of the anisotropic electron g factor as a probe of the electronic structure of GaBi $_{x}$ As $_{1 - x}$ /GaAs epilayers