Ballisticity of nanotube FETs: Role of phonon energy and gate bias

Abstract

We investigate the role of electron-phonon scattering and gate bias in degrading the drive current of nanotube MOSFETs. Our central results are: (i) Optical phonon scattering significantly decreases the drive current only when gate voltage is higher than a well-defined threshold. It means that elastic scattering mechanisms are most detrimental to nanotube MOSFETs. (ii) For comparable mean free paths, a lower phonon energy leads to a larger degradation of drive current. Thus for semiconducting nanowire FETs, the drive current will be more sensitive than carbon nanotube FETs because of the smaller phonon energies in semiconductors. (iii) Radial breathing mode phonons cause an appreciable reduction in drive current.

16 pages, 1 table, 4 figures

References in corpus (8)

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• Role of Phonon Scattering in Graphene Nanoribbon Transistors: Non-Equilibrium Green's Function Method with Real Space Approach
• Phonon Driven Nonlinear Electrical Behavior in Molecular Devices
• Analytical device model for graphene bilayer field-effect transistors using weak nonlocality approximation
• Electron back scattering in CNTFETs