Fabrication and Characterization of Electrostatic Quantum Dots in a Si/SiGe 2D Electron Gas, Including an Integrated Read-out Channel
arXiv:cond-mat/0504046 · doi:10.1063/1.2136436
Abstract
A new fabrication technique is used to produce quantum dots with read-out channels in silicon/silicon-germanium two-dimensional electron gases. The technique utilizes Schottky gates, placed on the sides of a shallow etched quantum dot, to control the electronic transport process. An adjacent quantum point contact gate is integrated to the side gates to define a read-out channel and thus allow for noninvasive detection of the electronic occupation of the quantum dot. Reproducible and stable Coulomb oscillations and the corresponding jumps in the read-out channel resistance are observed at low temperatures. The fabricated dot combined with the read-out channel represent a step towards the spin-based quantum bit in Si/SiGe heterostructures.
arXiv comment3 pages, 4 figs
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