Multiband theory of multi-exciton complexes in self-assembled quantum dots

Abstract

We report on a multiband microscopic theory of many-exciton complexes in self-assembled quantum dots. The single particle states are obtained by three methods: single-band effective-mass approximation, the multiband $k\cdot p$ method, and the tight-binding method. The electronic structure calculations are coupled with strain calculations via Bir-Pikus Hamiltonian. The many-body wave functions of $N$ electrons and $N$ valence holes are expanded in the basis of Slater determinants. The Coulomb matrix elements are evaluated using statically screened interaction for the three different sets of single particle states and the correlated $N$-exciton states are obtained by the configuration interaction method. The theory is applied to the excitonic recombination spectrum in InAs/GaAs self-assembled quantum dots. The results of the single-band effective-mass approximation are successfully compared with those obtained by using the of $k\cdot p$ and tight-binding methods.

10 pages, 8 figures

References in corpus (6)

• Eight-band calculations of strained InAs/GaAs quantum dots compared with one, four, and six-band approximations
• Comparison of two methods for describing the strain profiles in quantum dots
• Theoretical interpretation of the experimental electronic structure of lens shaped, self-assembled InAs/GaAs quantum dots
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• Electron-hole correlations in semiconductor quantum dots with tight-binding wave functions
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• Atomistic theory of electronic and optical properties of InAs/InP self-assembled quantum dots on patterned substrates
• Interface roughness, carrier localization and wave function overlap in $c$-plane InGaN/GaN quantum wells: Interplay of well width, alloy microstructure, structural inhomogeneities and Coulomb effects
• Atomistic theory of electronic and optical properties of InAsP/InP nanowire quantum dots
• Multiple charging of InAs/GaAs quantum dots by electrons or holes: addition energies and ground-state configurations
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• Theoretical analysis of influence of random alloy fluctuations on the opto-electronic properties of site-controlled (111)-oriented InGaAs/GaAs quantum dots
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