Coulomb scattering in nitride based self-assembled quantum-dot systems
arXiv:cond-mat/0507084 · doi:10.1103/PhysRevB.72.235311
Abstract
We study the carrier capture and relaxation due to Coulomb scattering in nitride-based quantum dots on the basis of population kinetics. For the states involved in the scattering processes the combined influence of the quantum-confined Stark effect and many-body renormalizations is taken into account. The charge separation induced by the built-in field has important consequences on the capture and relaxation rates. It is shown that its main effect comes through the renormalization of the energies of the states involved in the collisions, and leads to an increase in the scattering efficency.
11 pages, 7 figures
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Cited by in corpus (4)
- Influence of carrier-carrier and carrier-phonon correlations on optical absorption and gain in quantum-dot systems
- A comparison of atomistic and continuum theoretical approaches to determine electronic properties of GaN/AlN quantum dots
- Comparison of EIT schemes in semiconductor quantum dot structures: Impact of many-body interactions
- Quantum kinetic theory of phonon-assisted carrier transitions in nitride-based quantum-dot systems