Experimental Separation of Rashba and Dresselhaus Spin-Splittings in Semiconductor Quantum Wells

Abstract

The relative strengths of Rashba and Dresselhaus terms describing the spin-orbit coupling in semiconductor quantum well (QW) structures are extracted from photocurrent measurements on n-type InAs QWs containing a two-dimensional electron gas (2DEG). This novel technique makes use of the angular distribution of the spin-galvanic effect at certain directions of spin orientation in the plane of a QW. The ratio of the relevant Rashba and Dresselhaus coefficients can be deduced directly from experiment and does not relay on theoretically obtained quantities. Thus our experiments open a new way to determine the different contributions to spin-orbit coupling.

References in corpus (7)

• Non-ballistic spin field-effect transistor
• Gate-Controlled Spin-Orbit Quantum Interference Effects in Lateral Transport
• Weak Antilocalization and Spin Precession in Quantum Wells
• Giant Spin Relaxation Anisotropy in Zinc-Blende Heterostructures
• Spin Relaxation Anisotropy in Two-Dimensional Semiconductor Systems
• Interference of Spin Splittings in Magneto-Oscillation Phenomena in Two-Dimensional Systems
• Effect of bulk inversion asymmetry on the Datta-Das transistor

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