Analysis of the radio-frequency single-electron transistor with large quality factor

Abstract

We have analyzed the response and noise-limited sensitivity of the radio-frequency single-electron transistor (RF-SET), extending the previously developed theory to the case of arbitrary large quality factor Q of the RF-SET tank circuit. It is shown that while the RF-SET response reaches the maximum at Q roughly corresponding to the impedance matching condition, the RF-SET sensitivity monotonically worsens with the increase of Q. Also, we propose a novel operation mode of the RF-SET, in which an overtone of the incident rf wave is in resonance with the tank circuit.

4 pages, submitted to Appl.Phys.Lett

References in corpus (4)

• Sensitivity of a micromechanical displacement detector based on the radio-frequency single-electron transistor
• Charge noise analysis of an AlGaAs/GaAs quantum dot using transmission-type radio-frequency single-electron transistor technique
• Charge sensitivity of radio frequency single-electron transistor (RF-SET)
• Intrinsic noise of a micro-mechanical displacement detector based on the radio-frequency single-electron transistor

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