14 citations · 25 across the 3 of their papers we have counts for
3 papers
Physics-Based Compact Modeling of Double-Gate Graphene Field-Effect Transistor Operation Including Description of Two Saturation Modes
Gennady I. Zebrev, Alexander A. Tselykovskiy, Valentin O. Turin
Based on diffusion-drift approximation a version of analytic compact model for large-area double-gate graphene field-effect transistor is presented. As parts of the model, the elec…
Numerical analysis of the radio-frequency single-electron transistor operation
Valentin O. Turin, Alexander N. Korotkov
We have analyzed numerically the response and noise-limited charge sensitivity of a radio-frequency single-electron transistor (RF-SET) in a non-superconducting state using the ort…
Analysis of the radio-frequency single-electron transistor with large quality factor
Valentin O. Turin, Alexander N. Korotkov
We have analyzed the response and noise-limited sensitivity of the radio-frequency single-electron transistor (RF-SET), extending the previously developed theory to the case of arb…