Exchange Splitting and Charge Carrier Spin Polarization in EuO

Abstract

High quality thin films of the ferromagnetic semiconductor EuO have been prepared and were studied using a new form of spin-resolved spectroscopy. We observed large changes in the electronic structure across the Curie and metal-insulator transition temperature. We found that these are caused by the exchange splitting of the conduction band in the ferromagnetic state, which is as large as 0.6 eV. We also present strong evidence that the bottom of the conduction band consists mainly of majority spins. This implies that doped charge carriers in EuO are practically fully spin polarized.

4 pages, 5 figures

References in corpus (2)

• Prediction of a surface state and a related surface insulator-metal transition for the (100) surface of stochiometric EuO
• Temperature-dependent bandstructure of bulk EuO

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