Effect of Gd doping and O deficiency on the Curie temperature of EuO

Abstract

The effect of Gd doping and O deficiency on the electronic structure, exchange interaction, and Curie temperature of EuO in the cubic and tetragonal phases is studied by means of density functional theory. For both defects, the Curie temperature is found to exhibit a distinct maximum as a function of the defect concentration. The existence of optimal defect concentrations is explained by the interplay of the on-site, RKKY, and superexchange contributions to the magnetism.

5 figures, 14 pages (preprint style)

References in corpus (6)

• Integration of the Ferromagnetic Insulator EuO onto Graphene
• Epitaxial influence on the ferromagnetic semiconducotor EuO
• Simultaneous ferromagnetic metal-semiconductor transition in electron-doped EuO
• Epitaxial EuO Thin Films on GaAs
• Epitaxy, stoichiometry, and magnetic properties of Gd-doped EuO films on YSZ (001)
• Temperature dependence of the electronic structure and Fermi-surface reconstruction of Eu(1-x)Gd(x)O through the ferromagnetic metal-insulator transition

Cited by in corpus (3)

• The elevated Curie temperature and half-metallicity in the ferromagnetic semiconductor La${}_x$Eu${}_{1-x}$O
• Growth of EuO single crystals at reduced temperatures
• Theory of Curie temperature enhancement in electron-doped EuO