Epitaxy, stoichiometry, and magnetic properties of Gd-doped EuO films on YSZ (001)

Abstract

We have succeeded in preparing high-quality Gd-doped single-crystalline EuO films. Using Eu-distillation-assisted molecular beam epitaxy and a systematic variation in the Gd and oxygen deposition rates, we have been able to observe sustained layer-by-layer epitaxial growth on yttria-stabilized cubic zirconia (001). The presence of Gd helps to stabilize the layer-by-layer growth mode. We used soft x-ray absorption spectroscopy at the Eu and Gd M4,5 edges to confirm the absence of Eu3+ contaminants and to determine the actual Gd concentration. The distillation process ensures the absence of oxygen vacancies in the films. From magnetization measurements we found the Curie temperature to increase smoothly as a function of doping from 70 K up to a maximum of 125 K. A threshold behavior was not observed for concentrations as low as 0.2%.

8 pages, 9 figures

References in corpus (4)

• Epitaxial influence on the ferromagnetic semiconducotor EuO
• Epitaxial and layer-by-layer growth of EuO thin films on yttria-stabilized cubic zirconia (001) using MBE distillation
• Soft x-ray magnetic circular dichroism study on Gd-doped EuO thin films
• Simultaneous ferromagnetic metal-semiconductor transition in electron-doped EuO

Cited by in corpus (3)

• Temperature dependence of the electronic structure and Fermi-surface reconstruction of Eu(1-x)Gd(x)O through the ferromagnetic metal-insulator transition
• Table-like magnetocaloric effect and enhanced refrigerant capacity in EuO1-δ thin films
• NO-assisted molecular-beam epitaxial growth of nitrogen substituted EuO