Simultaneous ferromagnetic metal-semiconductor transition in electron-doped EuO
arXiv:0708.0416 · doi:10.1103/PhysRevLett.100.046404
Abstract
We present a general framework to describe the simultaneous para-to-ferromagnetic and semiconductor-to-metal transition in electron-doped EuO. The theory correctly describes detailed experimental features of the conductivity and of the magnetization, in particular the doping dependence of the Curie temperature. The existence of correlation-induced local moments on the impurity sites is essential for this description.
4 pages, 4 figures, Phys. Rev. Lett., published version; different behavior of Gd impurities and O defects clarified