Metal-insulator transition in EuO

Abstract

It is shown that the spectacular metal-insulator transition in Eu-rich EuO can be simulated within an extended Kondo lattice model. The different orders of magnitude of the jump in resistivity in dependence on the concentration of oxygen vacancies as well as the low-temperature resistance minimum in high-resistivity samples are reproduced quantitatively. The huge colossal magnetoresistance (CMR) is calculated and discussed.

References in corpus (3)

• Exchange Splitting and Charge Carrier Spin Polarization in EuO
• Thermoelectric Response Near the Density Driven Mott Transition
• Low density approach to the Kondo-lattice model

Cited by in corpus (13)

• Simultaneous ferromagnetic metal-semiconductor transition in electron-doped EuO
• The role of magnetic polarons in ferromagnetic GdN
• First-principles study of phase stability of Gd-doped EuO and EuS
• Magnetic properties of pure and Gd doped EuO probed by NMR
• Electronic structure and magnetic properties of Gd-doped and Eu-rich EuO
• The phase transition in the localized ferromagnet EuO probed by muSR
• Carrier induced ferromagnetism in concentrated and diluted local-moment systems
• Field-induced Metal-Insulator Transition in $\beta$-EuP${}_3$
• On the theory of indirect exchange in EuO
• Measurements of thermodynamic and transport properties of EuC${}_2$: a low-temperature analogue of EuO
• Interface enhanced magnetic anisotropy in Pt/EuO films
• Precritical anomalous scaling and magnetization temperature dependence in cubic ferromagnetic crystals
• Linear colossal magnetoresistance driven by magnetic textures in LaTiO3 thin films on SrTiO3