Epitaxial EuO Thin Films on GaAs
arXiv:1008.0898 · doi:10.1063/1.3490649
Abstract
We demonstrate the epitaxial growth of EuO on GaAs by reactive molecular beam epitaxy. Thin films are grown in an adsorption-controlled regime with the aid of an MgO diffusion barrier. Despite the large lattice mismatch, it is shown that EuO grows well on MgO(001) with excellent magnetic properties. Epitaxy on GaAs is cube-on-cube and longitudinal magneto-optic Kerr effect measurements demonstrate a large Kerr rotation of 0.57°, a significant remanent magnetization, and a Curie temperature of 69 K.
5 pages, 3 figures
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Cited by in corpus (4)
- Integration of the Ferromagnetic Insulator EuO onto Graphene
- Temperature dependence of the electronic structure and Fermi-surface reconstruction of Eu(1-x)Gd(x)O through the ferromagnetic metal-insulator transition
- TiO2 as an electrostatic template for epitaxial growth of EuO on MgO(001) by reactive molecular beam epitaxy
- NO-assisted molecular-beam epitaxial growth of nitrogen substituted EuO