Pressure-induced electronic mixing and enhancement of ferromagnetic ordering in EuX (X=Te, Se, S, O) magnetic semiconductors

Abstract

The pressure- and anion-dependent electronic structure of EuX (X=Te, Se, S, O) monochalcogenides is probed with element- and orbital-specific X-ray absorption spectroscopy in a diamond anvil cell. An isotropic lattice contraction enhances the ferromagnetic ordering temperature by inducing mixing of Eu 4{\it f} and 5{\it d} electronic orbitals. Anion substitution (Te $\to$ O) enhances competing exchange pathways through spin-polarized anion {\it p} states, counteracting the effect of the concomitant lattice contraction. The results have strong implications for efforts aimed at enhancing FM exchange interactions in thin films through interfacial strain or chemical substitutions.

arXiv commentTo appear in Phys. Rev. Lett

References in corpus (5)

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• Epitaxial influence on the ferromagnetic semiconducotor EuO
• Soft x-ray magnetic circular dichroism study on Gd-doped EuO thin films
• Full Bulk Spin Polarization and Intrinsic Tunnel Barriers at the Surface of Layered Manganites
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