Single hole transistor in a p-Si/SiGe quantum well

Abstract

A single hole transistor is patterned in a p-Si/SiGe quantum well by applying voltages to nanostructured top gate electrodes. Gating is achieved by oxidizing the etched semiconductor surface and the mesa walls before evaporation of the top gates. Pronounced Coulomb blockade effects are observed at small coupling of the transistor island to source and drain.

3 pages, 3 figures

References in corpus (1)

• Coexistence of Weak Localization and a Metallic Phase in Si/SiGe Quantum Wells

Cited by in corpus (5)

• Hybrid superconductor-semiconductor devices made from self-assembled SiGe nanocrystals on silicon
• Electrical control of g-factors in a few-hole silicon nanowire MOSFET
• Single-hole transistor in p-type GaAs/AlGaAs heterostructures
• Few electron double quantum dot in an isotopically purified ${}^{28}$Si quantum well
• Single Hole Transport in a Silicon Metal-Oxide-Semiconductor Quantum Dot