15 citations · 17 across the 2 of their papers we have counts for
2 papers
cond-mat.mes-hall2000★ 15 cited
Single hole transistor in a p-Si/SiGe quantum well
U. Doetsch, U. Gennser, T. Heinzel +5
A single hole transistor is patterned in a p-Si/SiGe quantum well by applying voltages to nanostructured top gate electrodes. Gating is achieved by oxidizing the etched semiconduct…
cond-mat.mes-hall1999★ 2 cited
Metal-Insulator Transition in a 2-Dimensional System with an Easy Spin Axis
V. Senz, U. Doetsch, U. Gennser +5
The low-temperature resistivity of a SiGe 2-dimensional hole gas has been studied using the gate controlled carrier density as a parameter. A metal-insulator transition is seen bot…