5 papers
Heating of Two-Dimensional Holes in SiGe and the B = 0 Metal-Insulator Transition
R. Leturcq, D. L'Hote, R. Tourbot +6
We study the resistivity vs. electric field dependence of a 2D hole system in SiGe close to the B=0 metal-insulator transition. Using as a ``thermometer'' to obtain the…
Analysis of the resistance in p-SiGe over a wide temperature range
V. Senz, T. Ihn, T. Heinzel +6
The temperature dependence of a system exhibiting a `metal-insulator transition in two dimensions at zero magnetic field' (MIT) is studied up to 90K. Using a classical scattering m…
Single hole transistor in a p-Si/SiGe quantum well
U. Doetsch, U. Gennser, T. Heinzel +5
A single hole transistor is patterned in a p-Si/SiGe quantum well by applying voltages to nanostructured top gate electrodes. Gating is achieved by oxidizing the etched semiconduct…
Analysis of the Metallic Phase of Two-Dimensional Holes in SiGe in Terms of Temperature Dependent Screening
V. Senz, T. Ihn, T. Heinzel +4
We find that temperature dependent screening can quantitatively explain the metallic behaviour of the resistivity on the metallic side of the so-called metal-insulator transition i…
Coexistence of Weak Localization and a Metallic Phase in Si/SiGe Quantum Wells
V. Senz, T. Heinzel, T. Ihn +4
Magnetoresistivity measurements on p-type Si/SiGe quantum wells reveal the coexistence of a metallic behavior and weak localization. Deep in the metallic regime, pronounced weak lo…