Engineering the in-plane anomalous Hall effect in CdAs thin films
arXiv:2309.15457 · doi:10.1103/PhysRevB.109.155408
Abstract
We predict two topological phase transitions for cadmium arsenide (\ce{Cd3As2}) thin films under in-plane magnetic field, taking advantage of a four-band model and effective factors calculated from first principles. Film thickness, growth direction and in-plane Zeeman coupling strength can all serve as control parameters to drive these phase transitions. For (001) oriented \ce{Cd3As2} thin films, a two dimensional Weyl semimetal phase protected by symmetry can be realized using an in-plane magnetic field, which has recently been reported in our companion paper. We then put forth two pathways to achieve in-plane anomalous Hall effects (IPAHE). By either introducing a trigonal warping term or altering the growth orientation, the emergent symmetry can be broken. Consequently, in the clean limit and at low temperatures, quantized Hall plateaus induced by in-plane Zeeman fields become observable.
Fix several typos and update references
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Cited by in corpus (12)
- Observation of in-plane anomalous Hall effect associated with orbital magnetization
- Designing topology and fractionalization in narrow gap semiconductor films via electrostatic engineering
- Evidence of zero-field Wigner solids in ultra-thin films of cadmium arsenide
- Anomalous Hall effect in Dirac semimetal probed by in-plane magnetic field
- Artificial moiré engineering for an ideal BHZ model
- Magnetic Field Induced Quantum Metric Dipole in Dirac Semimetal Cd3As2
- Tunable linear and nonlinear anomalous Hall transport in two-dimensional CrPS
- Efficient prediction of topological superlattice bands with spin-orbit coupling
- Universal classes of disorder scatterings in in-plane anomalous Hall effect
- Nonlinear Magnetoelectric Edelstein Effect
- Magneto-cubic and magneto-linear dependence observed in an in-plane anomalous Hall magnet
- Quantum geometric map of magnetotransport