Giant Hall Switching by Surface-State-Mediated Spin-Orbit Torque in a Hard Ferromagnetic Topological Insulator

Abstract

Topological insulators (TI) and magnetic topological insulators (MTI) can apply highly efficient spin-orbit torque (SOT) and manipulate the magnetization with their unique topological surface states with ultra-high efficiency. Here, we demonstrate efficient SOT switching of a hard MTI, V-doped (Bi,Sb)2Te3 (VBST) with a large coercive field that can prevent the influence of an external magnetic field. A giant switched anomalous Hall resistance of 9.2 $k\Omega$ is realized, among the largest of all SOT systems, which makes the Hall channel a good readout and eliminates the need to fabricate complicated magnetic tunnel junction (MTJ) structures. The SOT switching current density can be reduced to $2.8\times 10^{5}A/c{m}^2$. Moreover, as the Fermi level is moved away from the Dirac point by both gate and composition tuning, VBST exhibits a transition from edge-state-mediated to surface-state-mediated transport, thus enhancing the SOT effective field to $1.56\pm 0.12T/(10^{6}A/c{m}^2)$ and the interfacial charge-to-spin conversion efficiency to $3.9\pm 0.3n{m}^{-1}$. The findings establish VBST as an extraordinary candidate for energy-efficient magnetic memory devices.

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Cited by in corpus (4)

• Gate-Tunable Spin-to-Charge Conversion in Topological Insulator-Magnetic Insulator Heterostructures at Room Temperature
• Spin-orbit torque switching of Néel order in band-inverted antiferromagnetic bilayer MnBi${}_2$Te${}_4$
• Designing Magnetic Topological Insulator Trilayers for Highly-Efficient Spin-Orbit Torque Switching
• AC Current-Driven Magnetization Switching and Nonlinear Hall Rectification in a Magnetic Topological Insulator