Channel length dependence of the formation of quantum dots in GaN/AlGaN FETs

Abstract

Quantum dots can be formed in simple GaN/AlGaN field-effect-transistors (FETs) by disordered potential induced by impurities and defects. Here, we investigate the channel length dependence of the formation of quantum dots. We observe decrease of the number of formed quantum dots with decrease of the FET channel length. A few quantum dots are formed in the case with the gate length of 0.05~$\mu$m and we evaluate the dot parameters and the disordered potential. We also investigate the effects of a thermal cycle and illumination of light, and reveal the change of the disordered potential.

10 pages, 5 figures

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Cited by in corpus (3)

• Wide dynamic range charge sensor operation by high-speed feedback control of radio-frequency reflectometry
• Microwave dependent quantum transport characteristics in GaN/AlGaN FETs
• Probing electron trapping by current collapse in GaN/AlGaN FETs utilizing quantum transport characteristics