most citedChannel length dependence of the formation of quantum dots in GaN/AlGaN FETs

3 citations · 3 across the 1 of their papers we have counts for

collaborators

1 paper

cond-mat.mes-hall2023★ 3 cited

Channel length dependence of the formation of quantum dots in GaN/AlGaN FETs

Kazuma Matsumura, Takaya Abe, Takahito Kitada +5

Quantum dots can be formed in simple GaN/AlGaN field-effect-transistors (FETs) by disordered potential induced by impurities and defects. Here, we investigate the channel length de…