Probing the uniaxial strain-dependent valley drift and Berry curvature in monolayer MoSiN
arXiv:2302.13123 · doi:10.1103/PhysRevMaterials.7.114003
Abstract
We use ab initio calculations and theoretical analysis to investigate the influence of in-plane strain field on valley drifts and Berry curvatures in the monolayer MoSiN, a prototypical septuple atomic layered two-dimensional material. The low energy electron and hole valleys drift far off the K/K' point under uniaxial strains. The direction and strength of valley drift strongly depend on the nature of the charge carrier and uniaxial strain with a more substantial response along the zigzag path. Our findings are governed by the interplay between microscopic orbital contribution and symmetry lowering. The changing geometric properties of Bloch states affect the Berry curvatures and circular dichroism. Specifically, Berry curvature dipole is significantly enhanced under the tensile strain along armchair and zigzag directions. Meanwhile, the particle-hole asymmetry arising from non-equivalent electron and hole valley drifts relax the selection rules, thus reducing the degree of circular polarization up to ~0.98. Therefore, strain engineering of valley physics in the monolayer MoSiN is of prime importance for valleytronics.
References in corpus (47)
- Atomically thin MoS2: A new direct-gap semiconductor
- Coupled spin and valley physics in monolayers of MoS2 and other group-VI dichalcogenides
- Wannier90: A Tool for Obtaining Maximally-Localised Wannier Functions
- Exciton Binding Energy and Nonhydrogenic Rydberg Series in Monolayer WS2
- Bandgap Engineering of Strained Monolayer and Bilayer MoS2
- Energy gaps, topological insulator state and zero-field quantum Hall effect in graphene by strain engineering
- The Valley Hall Effect in MoS2 Transistors
- Local strain engineering in atomically thin MoS2
- Implementation strategies in phonopy and phono3py
- Quantum nonlinear Hall effect induced by Berry curvature dipole in time-reversal invariant materials
- k.p theory for two-dimensional transition metal dichalcogenide semiconductors
- Probing Excitonic Dark States in Single-layer Tungsten Disulfide
- Experimental demonstration of continuous electronic structure tuning via strain in atomically thin MoS2
- Detecting Topological Currents in Graphene Superlattices
- Elastic properties of hydrogenated graphene
- Exceptional piezoelectricity, high thermal conductivity and stiffness and promising photocatalysis in two-dimensional MoSi2N4 family confirmed by first-principles
- Ultrafast Photoluminescence from Graphene
- Electrical control of the valley Hall effect in bilayer MoS2 transistors
- Structure-driven intercalated architecture of septuple-atomic-layer family with diverse properties from semiconductor to topological insulator to Ising superconductor
- Strain tuning of optical emission energy and polarization in monolayer and bilayer MoS2
- Valley-dependent properties of monolayer MoSiN, WSiN and MoSiAs
- Valley Magnetoelectricity in Single-Layer MoS2
- Strain-engineering of Berry curvature dipole and valley magnetization in monolayer MoS
- Theory of strain in single-layer transition metal dichalcogenides
- Magnetic control of the valley degree of freedom of massive Dirac fermions with application to transition metal dichalcogenides
- Valley pseudospin in monolayer MoSi2N4 and MoSi2As4
- The two-dimensional Brillouin zone of uniaxially strained graphene
- Topological currents in black phosphorus with broken inversion symmetry
- The effect of the hydrogen coverage on the Young modulus of graphene
- Valley Zeeman effect and spin-valley polarized conductance in monolayer MoS in a perpendicular magnetic field
- Edge modes in zigzag and armchair ribbons of monolayer MoS
- Pseudo-magnetic field-induced ultra-slow carrier dynamics in periodically strained graphene
- Strain effects on monolayer MoSi2N4: ideal strength and failure mechanism
- Edge states and topological insulating phases generated by curving a nanowire with Rashba spin-orbit coupling
- Tunable spin polarization and electronic structure of bottom-up synthesized MoSiN materials
- Prediction of protected band edge states and dielectric tunable quasiparticle and excitonic properties of monolayer MoSiN
- Inverse Funnel Effect of Excitons in Strained Black Phosphorus
- Mechanically Modulated Tunneling Resistance in Monolayer MoS2
- Coupled spin-valley, Rashba effect and hidden persistent spin polarization in WSiN family
- Electronic properties and quasi-particle model of monolayer MoSiN
- Strain dependence of photoluminescence and circular dichroism in transition metal dichalcogenides: a k.p analysis
- Magnetic borophenes from evolutionary search
- Origin of Rashba spin-splitting and strain tunability in ferroelectric bulk CsPbF
- Second Harmonic Generation of MoSi2N4 Layer
- Highly Tunable and Strong Bound Exciton in MoSi2N4 via Strain Engineering
- Rashba dominated spin-splitting in the bulk ferroelectric oxide perovskite KIO3
- Manipulation of valley and spin properties in two-dimensional Janus WSiGeZ (Z=N,P, As) through symmetry control