Second Harmonic Generation of MoSi2N4 Layer

Abstract

The recently discovered two-dimensional (2D) layered semiconductor MoSi2N4 has aroused great interest due to its unique 2D material characteristics. In this Letter, we found that differences in the structural details for MoSi2N4 may lead to differences in the intensity of second harmonic generation (SHG) and its response to strain. Accordingly, SHG can be used as a simple technique to identify the structural details of this system. We further calculated the SHG effects of MoSi2N4 derivatives and investigated their strain-regulation mechanism, especially including the anomalous SHG responses under strain for MoSi2P4 and MoGe2P4, differing from other known 2D materials. The studies may have forward-looking significance for the research of nonlinear optics and optoelectronics in this novel 2D material system.

7 pages, 4 figures

References in corpus (4)

• Restoring the density-gradient expansion for exchange in solids and surfaces
• Generalized gradient approximation for solids and their surfaces
• 2D materials and van der Waals heterostructures
• Linear magneto-electric phase in ultrathin MnPS${}_3$ probed by optical second harmonic generation

Cited by in corpus (5)

• Parametric Nonlinear Optics with Layered Materials and Related Heterostructures
• Manipulation of valley and spin properties in two-dimensional Janus WSiGeZ${}_4$ (Z=N,P, As) through symmetry control
• Probing the uniaxial strain-dependent valley drift and Berry curvature in monolayer MoSi${}_2$N${}_4$
• Chiral phonons entangled with multiple Hall effects and unified convention for pseudoangular momentum in 2D materials
• Designing Efficient Metal Contacts to Two-Dimensional Semiconductors MoSi${}_2$N${}_4$ and WSi${}_2$N${}_4$ Monolayers