Magnetic topological transistor exploiting layer-selective transport

Abstract

We propose a magnetic topological transistor based on MnBi${}_2$Te${}_4$, in which the "on" state (quantized conductance) and the "off" state (zero conductance) can be easily switched by changing the relative direction of two adjacent electric fields (parallel vs. antiparallel) applied within a two-terminal junction. We explain that the proposed magnetic topological transistor relies on a novel mechanism due to the interplay of topology, magnetism, and layer degrees of freedom in MnBi${}_2$Te${}_4$. Its performance depends substantially on film thickness and type of magnetic order. We show that "on" and "off" states of the transistor are robust against disorder due to the topological nature of the surface states. Our work opens an avenue for applications of layer-selective transport based on the topological van der Waals antiferromagnet MnBi${}_2$Te${}_4$.

updated to published version

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Cited by in corpus (6)

• Dissipationless Layertronics in Axion Insulator $\mathrm{MnB}{\mathrm{i}}_2\mathrm{T}{\mathrm{e}}_4$
• Light-induced half-quantized Hall effect and axion insulator
• Chiral edge state coupling theory of transport in quantum anomalous Hall insulators
• Magnetic-flux tunable electronic transport through domain walls in a three-dimensional second-order topological insulator
• Emergent Weyl-like points in periodically modulated systems
• Conductance oscillations of antiferromagnetic layer tunnel junctions