Two-dimensional Platinum Diselenide Waveguide-Integrated Infrared Photodetectors
arXiv:2110.12874 · doi:10.1021/acsphotonics.1c01517
Abstract
Low cost, easily integrable photodetectors (PDs) for silicon (Si) photonics are still a bottleneck for photonic integrated circuits (PICs), especially for wavelengths above 1.8 m. Multilayered platinum diselenide (PtSe) is a semi-metallic two-dimensional (2D) material that can be synthesized below 450C. We integrate PtSe based PDs directly by conformal growth on Si waveguides. The PDs operate at 1550 nm wavelength with a maximum responsivity of 11 mA/W and response times below 8.4 s. Fourier transform infrared spectroscopy (FTIR) in the wavelength range from 1.25 m to 28 m indicates the suitability of PtSe for PDs far into the infrared wavelength range. Our PtSe PDs integrated by direct growth outperform PtSe PDs manufactured by standard 2D layer transfer. The combination of IR responsivity, chemical stability, selective and conformal growth at low temperatures, and the potential for high carrier mobility, make PtSe an attractive 2D material for optoelectronics and PICs.
23 pages, 4 figures
References in corpus (7)
- Two-Dimensional Material Nanophotonics
- Fast and broadband photoresponse of few-layer black phosphorus field-effect transistors
- Waveguide-integrated black phosphorus photodetector with high responsivity and low dark current
- Two dimensional semiconductors with possible high room temperature mobility
- Graphene-Based Integrated Photonics For Next-Generation Datacom And Telecom
- Ultrahigh photoresponse of few-layer TiS3 nanoribbon transistors
- Integrating Graphene into Semiconductor Fabrication Lines