Highly Accurate, Reliable and Non-Contaminating Two-Dimensional Material Transfer System
arXiv:2109.05158 · doi:10.1063/5.0071799
Abstract
The exotic properties of two-dimensional (2D) materials and 2D heterostructures, built by forming heterogeneous multi-layered stacks, have been widely explored across a number of subject matters following the goal to invent, design, and improve applications enabled by 2D materials. To successfully harvest these unique properties effectively and increase the yield of manufacturing 2D material-based devices for achieving reliable and repeatable results is the current challenge. The scientific community has introduced various experimental transfer systems explained in detail for exfoliated 2D materials, however, the field lacks statistical analysis and the capability of producing a transfer technique enabling; i) high transfer precision and yield, ii) cross-contamination free transfer, iii) multi-substrate transfer, and iv) rapid prototyping without wet chemistry. Here we introduce a novel 2D material deterministic transfer system and experimentally show its high accuracy, reliability, repeatability, and non-contaminating transfer features by demonstrating fabrication of 2D material-based optoelectronic devices featuring novel device physics and unique functionality. Such rapid and material-near prototyping capability can accelerate not only layered material science in discovery but also engineering innovations.
References in corpus (34)
- Electric Field Effect in Atomically Thin Carbon Films
- Van der Waals heterostructures
- Magic-angle graphene superlattices: a new platform for unconventional superconductivity
- 2D materials and van der Waals heterostructures
- Boron nitride substrates for high-quality graphene electronics
- Room-Temperature Quantum Hall Effect in Graphene
- Field-effect tunneling transistor based on vertical graphene heterostructures
- Atomically thin p-n junctions with van der Waals heterointerfaces
- Magnetic 2D materials and heterostructures
- Light-emitting diodes by bandstructure engineering in van der Waals heterostructures
- Phonon and Raman scattering of two-dimensional transition metal dichalcogenides from monolayer, multilayer to bulk material
- Strong interlayer coupling in van der Waals heterostructures built from single-layer chalcogenides
- Electroluminescence and photocurrent generation from atomically sharp WSe2/MoS2 heterojunction p-n diodes
- Cross-sectional imaging of individual layers and buried interfaces of graphene-based heterostructures and superlattices
- Probing magnetism in 2D van der Waals crystalline insulators via electron tunneling
- Channel Length Scaling of MoS2 MOSFETs
- Photovoltaic effect in few-layer black phosphorus PN junctions defined by local electrostatic gating
- Quantum engineering of transistors based on 2D materials heterostructures
- A new transfer technique for high mobility graphene devices on commercially available hexagonal boron nitride
- Optical identification of atomically thin dichalcogenide crystals
- Helicity resolved Raman scattering of MoS2, MoSe2, WS2 and WSe2 atomic layers
- Wedging Transfer of Nanostructures
- Universal Scaling Laws in Schottky Heterostructures Based on Two-Dimensional Materials
- Broadband gate-tunable THz plasmons in graphene heterostructures
- Uncovering the Effects of Metal Contacts on Monolayer MoS2
- Quantum Nanophotonics in Two-Dimensional Materials
- Wafer-scale integration of graphene-based photonic devices
- Fast Accurate Point of Care COVID-19 Pandemic Diagnosis Enabled Through Advanced Lab-on-a-Chip Optical Biosensors: Opportunities and Challenges
- Enhanced interlayer neutral excitons and trions in trilayer van der Waals heterostructures
- Twist-angle engineering of excitonic quantum interference and optical nonlinearities in stacked 2D semiconductors
- An inexpensive system for the deterministic transfer of 2D materials
- Twistronics versus straintronics in twisted bilayers of graphene and transition metal dichalcogenides
- A system for the deterministic transfer of 2D materials under inert environmental conditions
- Microscopic theory of the polarizability of transition metal dichalcogenides excitons: Application to WSe2