Large zero bias peaks and dips in a four-terminal thin InAs-Al nanowire device
arXiv:2107.08282 · doi:10.1103/PhysRevResearch.4.033235
Abstract
We report electron transport studies of a thin InAs-Al hybrid semiconductor-superconductor nanowire device using a four-terminal design. Compared to previous works, thinner InAs nanowire (diameter less than 40 nm) is expected to reach fewer sub-band regime. The four-terminal device design excludes electrode contact resistance, an unknown value which has inevitably affected previously reported device conductance. Using tunneling spectroscopy, we find large zero-bias peaks (ZBPs) in differential conductance on the order of . Investigating the ZBP evolution by sweeping various gate voltages and magnetic field, we find a transition between a zero-bias peak and a zero-bias dip while the zero-bias conductance sticks close to . We discuss a topologically trivial interpretation involving disorder, smooth potential variation and quasi-Majorana zero modes.
Raw data and processing codes are available at http://doi.org/10.5281/zenodo.5111639
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