activity
20202022
most citedPlateau regions for zero-bias peaks within 5% of the quantized conductance value

57 citations · 184 across the 7 of their papers we have counts for

collaborators

7 papers

cond-mat.mes-hall2022★ 3 cited

In situ tuning of dynamical Coulomb blockade on Andreev bound states in hybrid nanowire devices

Shan Zhang, Zhichuan Wang, Dong Pan +14

Electron interactions in quantum devices can exhibit intriguing phenomena. One example is assembling an electronic device in series with an on-chip resistor. The quantum laws of el…

cond-mat.mes-hall2022★ 57 cited

Plateau regions for zero-bias peaks within 5% of the quantized conductance value

Zhaoyu Wang, Huading Song, Dong Pan +13

Probing an isolated Majorana zero mode is predicted to reveal a tunneling conductance quantized at at zero temperature. Experimentally, a zero-bias peak (ZBP) is expected…

cond-mat.mes-hall2022★ 12 cited

Large Andreev bound state zero bias peaks in a weakly dissipative environment

Zhichuan Wang, Shan Zhang, Dong Pan +14

We study Andreev bound states in hybrid InAs-Al nanowire devices. The energy of these states can be tuned to zero by gate voltage or magnetic field, revealing large zero bias peaks…

physics.app-ph2021★ 2 cited

Large-composition-range pure-phase homogeneous InAsSb nanowires

Lianjun Wen, Dong Pan, Lei Liu +3

Narrow bandgap InAsSb nanowires show broad prospects for applications in wide spectrum infrared detectors, high-performance transistors and quantum computation. Realizi…

cond-mat.mes-hall2021★ 22 cited

Suppressing Andreev bound state zero bias peaks using a strongly dissipative lead

Shan Zhang, Zhichuan Wang, Dong Pan +14

Hybrid semiconductor-superconductor nanowires are predicted to host Majorana zero modes, manifested as zero-bias peaks (ZBPs) in tunneling conductance. ZBPs alone, however, are not…

cond-mat.mes-hall2021★ 48 cited

Large zero bias peaks and dips in a four-terminal thin InAs-Al nanowire device

Huading Song, Zitong Zhang, Dong Pan +11

We report electron transport studies of a thin InAs-Al hybrid semiconductor-superconductor nanowire device using a four-terminal design. Compared to previous works, thinner InAs na…

cond-mat.mtrl-sci2020★ 40 cited

In Situ Epitaxy of Pure Phase Ultra-Thin InAs-Al Nanowires for Quantum Devices

Dong Pan, Huading Song, Shan Zhang +13

Hybrid semiconductor-superconductor InAs-Al nanowires with uniform and defect-free crystal interfaces are one of the most promising candidates used in the quest for Majorana zero m…