Hyperfine-mediated transitions between electronic spin-1/2 levels of transition metal defects in SiC
arXiv:2104.12433 · doi:10.1088/1367-2630/ac1641
Abstract
Transition metal defects in SiC give rise to localized electronic states that can be optically addressed in the telecom range in an industrially mature semiconductor platform. This has led to intense scrutiny of the spin and optical properties of these defect centers. For spin-1/2 defects, a combination of the defect symmetry and the strong spin-orbit coupling may restrict the allowed spin transitions, giving rise to defect spins that are long lived, but hard to address via microwave spin manipulation. Here, we show via analytical and numerical results that the presence of a central nuclear spin can lead to a non-trivial mixing of electronic spin states, while preserving the defect symmetry. The interplay between a small applied magnetic field and hyperfine coupling opens up magnetic microwave transitions that are forbidden in the absence of hyperfine coupling, enabling efficient manipulation of the electronic spin. We also find that an electric microwave field parallel to the c-axis can be used to manipulate the electronic spin via modulation of the relative strength of the dipolar hyperfine term.
arXiv comment17 pages, 3 figures
References in corpus (18)
- Development of Quantum InterConnects for Next-Generation Information Technologies
- Semiconductor Qubits In Practice
- Atomic clock transitions in silicon-based spin qubits
- Electrical and optical control of single spins integrated in scalable semiconductor devices
- Probing spin-phonon interactions in silicon carbide with Gaussian acoustics
- Quantum network nodes based on diamond qubits with an efficient nanophotonic interface
- Quantum decoherence dynamics of divacancy spins in silicon carbide
- Electrically and mechanically tunable electron spins in silicon carbide color centers
- Photonic architecture for scalable quantum information processing in NV-diamond
- Electron Spin Decoherence in Silicon Carbide Nuclear Spin Bath
- Electrically driven spin resonance in silicon carbide color centers
- Electrical charge state manipulation of single silicon vacancies in a silicon carbide quantum optoelectronic device
- Optical Properties of Vanadium in 4H Silicon Carbide for Quantum Technology
- Identification and tunable optical coherent control of transition-metal spins in silicon carbide
- Spin-relaxation times exceeding seconds for color centers with strong spin-orbit coupling in SiC
- Hyperfine Structure of Transition Metal Defects in SiC
- {\textit{Ab initio} determination of pseudospin for paramagnetic defects in SiC
- Spin Structure and Resonant Driving of Spin-1/2 Defects in SiC